Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

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DOIResolve DOI: http://doi.org/10.1063/1.3240595
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume95
Issue13
Article number133120
AbstractIn crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission lectron microscopy measurements.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21276869
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Record identifieree4a74cd-330a-4477-aad2-204d173cc9a3
Record created2015-10-27
Record modified2016-05-09
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