Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

Download
  1. Get@NRC: Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.4813560
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume103
Issue3
Article number33103
SubjectExcitation energy density; Hetero-interfaces; Output intensity; PL property; Si/SiGe; Germanium; Multilayers; Silicon alloys; Photoluminescence
AbstractAn intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si1-xGex nanometer-thick layer (NL) with x ≈ 8% incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm^2 of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at ∼0.8 eV. These dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces.
Publication date
LanguageEnglish
AffiliationMeasurement Science and Standards; Information and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21270368
Export citationExport as RIS
Report a correctionReport a correction
Record identifiereeb36ef8-8678-498e-b08d-d7a39e618988
Record created2014-02-05
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)