Band alignment in Si₁₋yCy/Si(001) and Si₁₋xGex/Si₁₋yCy/Si(001) quantum wells by photoluminescence under applied [100] and [110] uniaxial stress

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DOIResolve DOI: http://doi.org/10.1103/PhysRevLett.78.2441
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TypeArticle
Journal titlePhysical Review Letters
ISSN0031-9007
Volume78
Issue12
Pages24412444; # of pages: 4
AbstractWe use a novel wafer bending technique to study band alignment under applied uniaxial stress in Si₁₋yCy/Si and Si₁₋xGex/Si₁₋yCy/Si heterostructures. We confirm a type I alignment for Si₁₋yCy/Si and report the first observation of an elastic strain induced type I to type II transition in Si₁₋yCy/Si quantum wells. Results for a Si₀.₈₄Ge₀.₁₆/Si₀.₉₉C₀.₀₁/Si structure support a type II transition between the SiGe valence band and the SiC conduction band. These results also indicate a conduction band offset of at most 65% of the band gap difference for Si₁₋yCy/Si with y = 0.5% or 1%.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedNo
Identifier10109961
NRC number1178
NPARC number12339207
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Record identifierf0c12f51-1037-47f4-b3a6-f4bf32b493c0
Record created2009-09-11
Record modified2016-05-09
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