Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

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DOIResolve DOI: http://doi.org/10.1063/1.3548544
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume98
Issue6
Article number61910
SubjectBand-bending effects; Carrier dynamics; Carrier relaxation; Charge separations; Experimental data; Hetero interfaces; Localized state; Low temperatures; Quantum well; Temporal change; Time-resolved photoluminescence; Semiconductor quantum wells
AbstractThe carrier dynamics in type-II GaAsSb/GaAs quantum well (QW) is investigated by time-resolved photoluminescence at low temperature. A detailed analysis of the experimental data reveal a complex carrier relaxation scenario involving both delocalized and localized states. We show that the QW emission is controlled by the dynamics of the band bending effect, related to temporal changes in the spatial charge separation near the GaAsSb/GaAs heterointerface, whereas localized states play a significant role in the carrier relaxation/redistribution between QW states.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number21271287
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Record identifierf0ddbfa3-3d3d-416c-8473-198c067e05b0
Record created2014-03-24
Record modified2016-05-09
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