An electrostatic model of split-gate quantum wires

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DOIResolve DOI: http://doi.org/10.1063/1.359108
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TypeArticle
Journal titleJournal of Applied Physics
Volume77
Issue12
Pages63616369; # of pages: 9
Subjectaluminium arsenides; depletion layers; donors; energylevel density; gallium arsenides; gates; illumination; ionization; quantum wires; silicon additions
AbstractWe present a theoretical model of split-gate quantum wires that are fabricated from GaAs-AlGaAs heterostructures. The model is built on the physical properties of donors and of semiconductor surfaces, and considerations of equilibrium in such systems. Based on the features of this model, we have studied different ionization regimes of quantum wires, provided a method to evaluate the shallow donor density, and calculated the depletion and pinchoff voltages of quantum wires both before and after illumination. A real split-gate quantum wire has been taken as an example for the calculations, and the results calculated for it agree well with experimental measurements. This paper provides an analytic approach for obtaining much useful information about quantum wires, as well as a general theoretical tool for other gated nanostructure systems.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327676
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Record identifierf104ec3a-c283-4486-bd45-2abe9c52e174
Record created2009-09-10
Record modified2016-05-09
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