The preparation of flat H-Si(111) surfaces in 40% NH4F revisited

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DOIResolve DOI: http://doi.org/10.1016/S0013-4686(00)00610-1
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TypeArticle
Journal titleElectrochimica Acta
Volume45
Issue28
Pages45914598; # of pages: 8
SubjectAFM; Etching; Flat H-Si(111) surface; Mechanism
AbstractThe reasons why ideally flat H-Si(111) surface can be prepared by NH4F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free solution. An analytical electrochemical study of the (111) and rough face of the same n-Si wafer is presented to yield insight into observations.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12328350
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Record identifierf15b1512-bb8b-4733-bee9-390748399f88
Record created2009-09-10
Record modified2016-05-09
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