Effect of doped substrate on GaAs/AlGaAs interfacial workfunction IR detector response through cavity enhancement

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DOIResolve DOI: http://doi.org/10.1109/TED.2005.843876
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TypeArticle
Journal titleIEEE Transactions on Electron Devices
Volume52
Issue3
Pages413418; # of pages: 6
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Institute for Biodiagnostics
Peer reviewedNo
NPARC number12743855
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Record identifierf2e92dca-ecd5-4f5f-a177-4fdd4ed99dac
Record created2009-10-27
Record modified2016-05-09
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