Energy relaxation by hot 2D electrons in AlGaN/GaN heterostructures: the influence of strong impurity and defect scattering

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/21/12/013
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TypeArticle
Journal titleSemiconductor science and technology
Volume21
Issue12
Pages15801583; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12744475
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Record identifierf362286f-cf0a-4a74-bdbd-fb7203aa0c9b
Record created2009-10-27
Record modified2016-05-09
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