Electrical and structural properties of PtSi films in deep submicron lines

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DOIResolve DOI: http://doi.org/10.1063/1.116646
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TypeArticle
Journal titleApplied Physics Letters
Volume68
Issue25
Pages35883590; # of pages: 3
SubjectELECTRICAL PROPERTIES; MICROSTRIP LINES; MORPHOLOGY; NANOSTRUCTURES; PLATINUM SILICIDES; SIZE EFFECT; TEM
AbstractElectrical and structural properties of platinum monosilicide (PtSi) in deep submicron lines are reported. The sheet resistance of the silicide films was found to be rather independent of the linewidth down to dimensions as small as 0.15 µm. Plan-view and cross-sectional transmission electron microscopy was performed to study the structural properties of these films, including their gain structures and lateral growth. The insensitive nature of the electrical properties of the silicide films to the linewidths is correlated with their structural properties.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedYes
NPARC number12328644
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Record identifierf3673376-7be4-4f3c-91fc-be9d5d85441f
Record created2009-09-10
Record modified2016-05-09
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