Single atom gas field ion sources for scanning ion microscopy

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DOIResolve DOI: http://doi.org/10.1007/978-3-319-41990-9_2
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TypeBook Chapter
Book titleHelium Ion Microscopy
Series titleNanoScience and Technology
ISSN1434-4904
2197-7127
ISBN978-3-319-41988-6
978-3-319-41990-9
Pages3161
AbstractThis chapter discusses fabrication and experimental evaluation of W(111) single atom tips (SATs) for gas field ion source applications. Firstly, a brief history of field ion microscopy (FIM) will be given since it will be heavily relied on throughout the text. We will discuss ion current generation in FIM and carry that knowledge over to fabricated SATs. Secondly, gas assisted etching and evaporation process will be discussed in detail. It will be shown that nanotip shape, and therefore SAT characteristics, can be controlled and modified to achieve desirable ion beam properties. Lastly, we will evaluate ion beam width as a function of tip voltage and temperature as examples of experimental efforts to better understand gas field ion source performance.
Publication date
LanguageEnglish
AffiliationNational Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
NPARC number23000868
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Record identifierf38d8ea3-4d6d-42e3-9abc-8bc2e614daae
Record created2016-10-26
Record modified2016-10-26
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