Modeling RF MOSFETs after Electrical Stress using Low-Noise Microstrip Line Layout

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TypeArticle
ConferenceRadio Frequency Integrated Circuits Symposium 2005, 2005
Pages157160; # of pages: 4
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346730
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Record identifierf4077f52-a64c-498a-8dda-ff4510cdafed
Record created2009-09-17
Record modified2016-05-09
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