Spatially-resolved EELS and EDS of HfOxNy Gate Dielectrics Deposited by MOCVD using [C2H52N]4Hf with NO and O2

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TypeArticle
ConferenceMicroscopy & Microanalysis 2004, Aug 04
Pagesp606
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346290
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Record identifierf42b882a-cdb8-4fa7-923e-532ce4f49a1d
Record created2009-09-17
Record modified2016-05-09
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