Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

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DOIResolve DOI: http://doi.org/10.1080/14786435.2013.778428
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TypeArticle
Journal titlePhilosophical Magazine
ISSN1478-6435
1478-6443
Volume93
Issue10-12
Pages12501267; # of pages: 18
AbstractStrain fields around grain boundary dislocations are measured by applying geometric phase analysis on atomic resolution images obtained from multiple fast acquisitions in scanning transmission electron microscopy. Maps of lattice distortions in silicon introduced by an array of pure edge dislocations located at a Σ9(122) grain boundary are compared with the predictions from isotropic elastic theory, and the atomic structure of dislocation cores is deduced from images displaying all the atomic columns. For strain measurements, reducing the acquisition time is found to significantly decrease the effects of instabilities on the high-resolution images. Contributions from scanning artefacts are also diminished by summing multiple images following a cross-correlation alignment procedure. Combined with the sub-Ångström resolution obtained with an aberration corrector, and the stable dedicated microscope’s environment, therapid acquisition method provides the measurements of atomic displacements with accuracy below 10 pm. Finally, the advantages of combining strain measurements with the collection of various analytical signals in a scanning transmission electron microscope are discussed.
Publication date
LanguageEnglish
AffiliationEnergy, Mining and Environment; National Research Council Canada
Peer reviewedYes
NRC number53108
NPARC number21268495
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Record identifierf54913cd-59d3-4b76-90aa-07616df1af4d
Record created2013-08-15
Record modified2016-05-09
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