AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

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DOIResolve DOI: http://doi.org/10.1109/EDSSC.2007.4450115
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TypeArticle
Journal titleIEEE Electron Device Letters
Volume29
Pages275278; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12744231
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Record identifierf565daf3-7dd6-489c-a698-b3052390bc97
Record created2009-10-27
Record modified2016-05-09
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