Memory in nonlinear ionization of transparent solids

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DOIResolve DOI: http://doi.org/10.1103/PhysRevLett.97.253001
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TypeArticle
Journal titlePhysical Review Letters
Volume97
Issue25
Pages253001
AbstractWe demonstrate a shot-to-shot reduction in the threshold laser intensity for ionization of bulk glasses illuminated by intense femtosecond pulses. For SiO2 the threshold change serves as positive feedback reenforcing the process that produced it. This constitutes a memory in nonlinear ionization of the material. The threshold change saturates with the number of pulses incident at a given spot. Irrespective of the pulse energy, the magnitude of the saturated threshold change is constant (~20%). However, the number of shots required to reach saturation does depend on the pulse energy. Recognition of a memory in ionization is vital to understand multishot optical or electrical breakdown phenomena in dielectrics.
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number12338175
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Record identifierf6f40f81-9daf-4ed1-85b2-4617e077ff22
Record created2009-09-10
Record modified2016-05-09
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