Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon

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DOIResolve DOI: http://doi.org/10.1143/JJAP.42.118
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TypeArticle
Journal titleJapanese Journal of Applied Physics
Volume42
Pages118121; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744217
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Record identifierf70ae53f-ddc5-455e-8222-a376802fbb6b
Record created2009-10-27
Record modified2016-05-09
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