Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation

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DOIResolve DOI: http://doi.org/10.1063/1.117106
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TypeArticle
Journal titleApplied Physics Letters
Volume69
Issue7
Pages993995; # of pages: 3
SubjectHeterostructures; Silicon; Germanium Silicides; Ion Implantation; Quantum Wells; Photoluminescence; Blue Shift; Strains; Ge and Si; ow-dimensional; mesoscopic; nanoscale and other related systems: structure and nonelectronic properties; Elemental semiconductors
AbstractA demonstration of quantum well intermixing using ion implantation in Si1-xGex/Si strained‐layer heterostructures is presented. The quantum‐well related photoluminescence lines of implanted and annealed samples are blue shifted by up to 40 meV relative to those measured in annealed‐only samples. Optical and structural qualities of the heterostructure remain high after implantation and annealing treatments.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12328451
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Record identifierf798477c-9b2d-4e09-a342-ba40314e6b4b
Record created2009-09-10
Record modified2016-05-09
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