Photoluminescence and electroluminescence at ~ 1.5 µm from MBE grown Si[1-x]Ge[x] alloys doped with erbium

AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
ConferenceElectronic, optical and device properties of layered structures : proceedings of symposium B, 1990 Fall Meeting of the Materials Research Society, November 26-December 1, 1990, Boston, Massachusetts, USA
Pages1114; # of pages: 4
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NRC number1109
NPARC number8900764
Export citationExport as RIS
Report a correctionReport a correction
Record identifierf8e469c0-571b-433d-ba5a-50048190b367
Record created2009-04-22
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)