Modeling a backgated GaAs metal--semiconductor--metal photodetector

Download
  1. Get@NRC: Modeling a backgated GaAs metal--semiconductor--metal photodetector (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.362733
AuthorSearch for: ; Search for:
TypeArticle
Journal titleJournal Of Applied Physics
Volume80
Issue9
Pages54495453; # of pages: 5
SubjectDIFFUSION LENGTH; ELECTRON DRIFT; GALLIUM ARSENIDES; MSM JUNCTIONS; OHMIC CONTACTS; PHOTODETECTORS; SIMULATION; TRANSIENTS
AbstractWe use a two-dimensional, drift-diffusion calculation to illustrate the physics behind the recently described GaAs metal–semiconductor–metal photodetector with an ohmic backgate provided by a p-doped layer. We calculate the transient response of this structure to a pulse of illumination. According to these simulations, the speed of the falling side of the response is improved by the backgate, which removes photogenerated holes from the active layer, but the degree of improvement depends on the chosen contact. The fastest fall time is found in the current at the cathode when both the cathode and backgate are grounded. We show why this is faster than the response of the current at either the anode or the backgate, and why this advantage is practically lost when the backgate is biased.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337923
Export citationExport as RIS
Report a correctionReport a correction
Record identifierf9ef0b69-9b98-429a-af97-6bace71d2f9d
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)