Preferential face deposition of gold nanoparticles on silicon nanowires by galvanic displacement

Download
  1. Get@NRC: Preferential face deposition of gold nanoparticles on silicon nanowires by galvanic displacement (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1039/C2CE25254F
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleCrystEngComm
Issue16
Pages52305234; # of pages: 5
AbstractWe report the preferential growth of gold nanoparticles on certain crystallographic facets of Si nanowires (NWs). Our synthetic approach uses galvanic displacement, an electroless deposition method; Si NWs act as the source of electrons required for the reduction of gold ions to metallic gold nanoparticles. Si NWs grown along the <112> growth direction have a characteristic rectangular cross-section with two each of (111) and (110) facets. Through detailed transmission electron microscopy (TEM) and TEM tomography, we were able to show the selective growth of gold nanoparticles on the Si(110) facets of the Si NWs with <112> growth directions; gold deposition was not observed on the Si(111) facets. These results may be related to the high reactivity of Si(110) facets towards gold deposition via galvanic displacement as compared to the reactivity of Si(111) facets.
Publication date
PublisherRSC Publishing
LanguageEnglish
AffiliationSecurity and Disruptive Technologies; National Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
NPARC number21268173
Export citationExport as RIS
Report a correctionReport a correction
Record identifierfaeb6f91-a756-4dc1-955f-b73039066d2b
Record created2013-05-16
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)