Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/28/3/035003
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TypeArticle
Journal titleSemiconductor Science and Technology
ISSN0268-1242
Volume28
Issue3
Article number35003
SubjectEnhanced efficiency; Experimental studies; GaAs; Iron oxide layers; MgO; Orders of magnitude; Quantum spin transport; Serendipitous discovery; Spin degrees; Spin injection; Spin injection and detections; Spin-injection efficiency; Spin-polarized electrons; Spintronic device; Tunnel barrier; Tunnel contacts; Iron oxides; Semiconductor devices; Electrodeposition
AbstractEfforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report experimental studies of lateral spin injection and detection through electrodeposited Fe/GaAs tunnel contacts. We demonstrate spin injection efficiencies two orders of magnitude higher than for state-of-the-art contacts fabricated via ultra-high-vacuum methods, including those with MgO or Al 2O3 tunnel barriers. To account for this enhancement, we propose that an iron oxide layer that forms at the Fe/GaAs interface during electrodeposition, being magnetic acts as a tunnel barrier with a spin-dependent height, presenting quantum spin transport calculations for such systems. This serendipitous discovery of greatly enhanced efficiency of spin injection into GaAs via electrodeposited contacts introduces a promising new direction for the development of practical semiconductor spintronic devices. © 2013 IOP Publishing Ltd.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC)
Peer reviewedYes
NPARC number21270648
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Record identifierfc0ee08a-c48d-4b17-8b05-e4b592b3386e
Record created2014-02-17
Record modified2016-05-09
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