Universal behaviour of metal-insulator transitions in the p-SiGe system

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DOIResolve DOI: http://doi.org/10.1016/S1386-9477(99)00142-3
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TypeArticle
Journal titlePhysica E: Low-dimensional Systems and Nanostructures
Volume6
Issue1-4
Pages268271; # of pages: 4
AbstractMagnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal–insulator transition. The close relationship between this transition, the high-field Hall insulator transition and the filling factor insulating state is demonstrated.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744272
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Record identifierfd05ca3f-abb3-4f51-8888-2a2534f660b2
Record created2009-10-27
Record modified2016-05-09
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