A simple wet etch for GaN

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DOIResolve DOI: http://doi.org/10.1007/s11664-999-0254-0
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TypeArticle
Journal titleJournal of Electronic Materials
Volume28
Issue10
PagesL24L26
AbstractA simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact to be made to the sample, and nitrides deposited on insulating substrates (such as sapphire) can be etched. The technique relies on adding an appropriate oxidizing agent, in this case, peroxydisulfate to KOH solutions. Maximum etch rates are observed at pH 12.4. The etch rate increases linearly with light intensity at 365 nm up to intensities of 25 mW/cm², where etch rates of up to 50 nm/min are observed.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328683
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Record identifierfd089cb8-b17b-429a-a44b-35dc78696c60
Record created2009-09-10
Record modified2016-05-09
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