Reaction induced by a scanning tunneling microscope: theory and application

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DOIResolve DOI: http://doi.org/10.1063/1.1383068
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TypeArticle
Journal titleThe Journal Of Chemical Physics
Volume115
Issue4
Pages18821890; # of pages: 9
Subjectchemical reactions; desorption; excited states; reaction kinetics; scanning tunnelling microscopy
AbstractWe develop a theoretical framework for study of chemical dynamics induced by a scanning tunneling microscope. An analytically solvable limit of the expression derived for the reaction rate reveals the information content of the voltage dependence of the observable. The theory is applied to the problem of H-atom desorption from a silicon surface in the 4–10 V range, where desorption is triggered by a single electronic transition into a short-lived excited state localized on the H–Si bond. The resonance lifetime is extracted by fitting the numerical results to an observed desorption yield versus voltage curve.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12327610
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Record identifierfd0d9297-4f06-4bf2-8e33-105d892865a1
Record created2009-09-10
Record modified2016-05-09
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