Interfacial Analysis of n-Alkanethiol Self-assembled Monolayers on GaAs(001) by Angle-Resolved X-ray Photoelectron Spectroscopy

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Proceedings titleProceedings of Surface Analysis 2012
ConferenceSurfaceAnalysis 2012: American Vacuum Society, Applied Surface Science Division Topical Conference, June 19-22, 2012, Richland, WA, U.S.A.
SubjectAngle-Resolved XPS; Alkanethiols; SAMs; Fractional overlayer; GaAs
AbstractThe compositional schoichiometry and structural morphology of n-alkanethiol self-assembled monolayers (SAMs) formed on the GaAs(001) surface was investigated by Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS). In order to decompose high resolution ARXPS spectra, synthetic lineshape calibration was first referred to Ar-ion beam sputtered GaAs using low-asymmetry Doniach-Sunjic lineshape profiles. Following SAM formation, the As-S chemical state was located at +1.8 eV from GaAs in the As 3d region in agreement with data following GaAs passivation with inorganic sulphides, and was estimated to represent a bond fraction of 30-50% relative to the total number of S-GaAs bonds. The surface was observed to be Ga-rich, but no Ga-S interface component could be resolved. The surface density of elemental As was quantified using fractional overlayer modeling. A value of 2.9-4.2x1o(14) cm(-2) was obtained, which represents a monolayer fraction of 35-50%. Similarly, fractional overlayer modeling was used to estimate the SAM uniformity, and a value of 92% was achieved.
AffiliationEnergy, Mining and Environment; National Research Council Canada
Peer reviewedNo
NRC numberNRC-EME-53093
NPARC number21275976
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Record identifierfd76a161-c48c-4f8f-bc48-be775e5613cf
Record created2015-08-25
Record modified2016-05-09
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