Phonon and polaron enhanced IR-THz photodetectors

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Proceedings titleProceedings of SPIE - The International Society for Optical Engineering
ConferenceQuantum Sensing and Nanophotonic Devices VIII, 23 January 2011 through 27 January 2011, San Francisco, CA
Article number79450X
SubjectCompound semiconductors; Coupled systems; Electrons and phonons; Fano resonances; General approach; infrared; Intersubband transitions; Photocurrent spectrum; Polar optical phonons; Processing technologies; quantum well; Semiconductor nanostructures; Tera Hertz; Infrared detectors; Nanophotonics; Optoelectronic devices; Phonons; Photonic devices; Polarons; Semiconductor devices; Semiconductor growth; Semiconductor quantum wells; Quantum well infrared photodetectors
AbstractThanks to the modern compound semiconductor growth and processing technologies, quantum wells and related semiconductor nanostructures have been widely investigated for infrared-terahertz devices. Here we propose a new general approach to make use of polar optical phonons in quantum wells for infrared (IR) and terahertz (THz) detection. Polar optical phonons strongly couple with both electrons and photons, and hence are potentially useful for photonic devices. As the first example, we show the coupling of phonon and intersubband transition leading to Fano resonance in photocurrent spectra. We investigate the phenomenon experimentally in specially designed GaAs/AlGaAs quantum well infrared photodetectors. Finally, we discuss the future research and potentials. Strongly coupled systems of electrons and phonons, i.e., polarons, may lead to new IR-THz photodetectors. © 2011 SPIE.
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AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271544
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Record identifierfda3ec6e-6583-48f6-b9e7-59761d42bb55
Record created2014-03-24
Record modified2016-05-09
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