Influence of crystalline Defects on Transport Properties of GaN Grown by Ammonia-Molecular Beam Epitaxy and Magnetron Sputter Epitaxy

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DOIResolve DOI: http://doi.org/10.1007/s11664-000-0061-0
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TypeArticle
Journal titleJournal of Electronic Materials
Volume29
Issue3
Pages268273; # of pages: 6
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12339016
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Record identifierfeb9ff23-2696-4a30-b5f8-bc2059e4aabc
Record created2009-09-11
Record modified2016-05-09
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