Self-heating in multi-emitter SiGe HBTs

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Proceedings titleSelected papers from the International Semiconductor Device Research Symposium (ISDRS'03)
Series titleSolid-state electronics; Volume 48
ConferenceInternational Semiconductor Device Research Symposium 2003, 10-12 December 2003, Washington, D.C., USA
Pages20012006; # of pages: 6
AbstractHigh power bipolar transistors often have multiple emitters, to achieve high currents, and efficient use of the whole emitter area. The emitters experience high current densities and are self-heated above the ambient temperature, leading to concerns about thermal run-away and damage to the device. Here we use a multi-emitter SiGe HBT, with multiple emitter contacts, to examine the temperature distribution in the emitters in such devices. We have measured the temperature increase in different emitters by biasing one emitter at a time and using the other base–emitter junctions as thermometers. We show that use of a selectively implanted collector does not alter the temperature increase or thermal coupling between the emitters.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744275
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Record identifierfed55fef-86a8-416d-b952-7075418f8c54
Record created2009-10-27
Record modified2016-05-09
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