InP-based quantum dot lasers

  1. Get@NRC: InP-based quantum dot lasers (Opens in a new window)
DOIResolve DOI:
AuthorSearch for:
TypeBook Chapter
Book titleAdvances in Semiconductor Lasers
Series numberVolume86
Pages419453; # of pages: 35
SubjectLaser; Quantum dot; InP; InAs; Mode locked; Semiconductor optical amplifier
AbstractQuantum dot-based lasers have long been predicted to have interesting properties as well as performance advantages over more conventional quantum well-based devices. The development of InP-based quantum dot lasers for use in the 1.55 μm wavelength range is discussed here. The growth of high-quality quantum dots in this wavelength range is first described, followed by their use for laser-type applications. The performance of simple Fabry–Perot lasers is discussed with demonstrations of their high-speed dynamics and advantages for amplifier applications. The large spectra bandwidth of the gain and fast dynamics are used to produce record short pulse widths and high-repetition rate mode-locked lasers. The quantum dot gain medium is also demonstrated to have interesting properties for single frequency lasers, with very narrow linewidths and high side-mode suppression ratios. Although still in its infancy, InP-based quantum dot lasers are already demonstrating high performance as well as novel characteristics.
Publication date
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21268617
Export citationExport as RIS
Report a correctionReport a correction
Record identifierff6a3bdf-e22b-497c-adb2-a9b0a3f8c2ff
Record created2013-10-28
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)