Characterization of as-grown and annealed thin SiO2 films formed in 0.1 M HCl

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DOIResolve DOI: http://doi.org/10.1116/1.580033
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TypeArticle
Journal titleJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Volume14
Issue4
Pages24372442; # of pages: 6
Subjectannealing; electrochemistry; ellipsometry; etching; hydrochloric acid; infrared spectra; oxidation; silicon oxides; thickness; thin films; voltage dependence
AbstractAnodic oxidation at constant voltage has been used to produce oxide films of thickness 10舑440 Å on Si(100). The electrolyte was 0.1 M HCl. Both annealed and as-grown samples were characterized by ellipsometry and Fourier transform infrared spectroscopy (FTIR), as well as by etch rate measurements in dilute HF. For as-grown samples, the voltage dependence of the thickness was determined. FTIR results for the as-grown films showed that the properties were dependent on the oxide thickness and not directly on the formation voltage. These results also provided a basis of comparison for the annealed samples. Demonstrably higher quality oxide films were characteristic of the annealed samples in comparison to the as-grown samples. The higher quality of the annealed samples was confirmed by measurement of the etch rate.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327701
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Record identifierff77f6c3-cc07-431c-b22c-d3f459a74d72
Record created2009-09-10
Record modified2016-05-09
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