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1. Structural parameters of Mayall II = G1 in M31 NPArC # 13052637

Search for Ma, J.; Search for de Grijs, R.; Search for Chen, D.; Search for van den Bergh, Sidney; Search for Fan, Z.; Search for Wu, Z.; Search for Wu, H.; Search for Zhou, X.; Search for Wu, J.; Search for Jiang, Zhengming; Search for Chen, J.

Monthly Notices of the Royal Astronomical Society, 376 (4), 2007, p. 1621-1629

Resolve DOI: http://dx.doi.org/10.1111/j.1365-2966.2007.11573.x

Find@CISTI Structural parameters of Mayall II = G1 in M31 NPArC # 13052637 (Opens in a new window)

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2. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the delta-doped barrier layer NPArC # 12328958

Search for Fan, Z. Y.; Search for Li, J.; Search for Lin, J. Y.; Search for Jiang, H. X.; Search for Liu, Y.; Search for Bardwell, J. A.; Search for Webb, J. B.; Search for Tang, H.

MRS Proceedings, (2002 MRS Fall Meeting - Symposium L – GaN and Related Alloys), 743, 2002

Resolve DOI: http://dx.doi.org/10.1557/PROC-743-L9.11

Share It AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the delta-doped barrier layer NPArC # 12328958