Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation

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DOIResolve DOI: http://doi.org/10.1149/1.2388733
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TypeArticle
Journal titleJournal of the Electrochemical Society
Volume154
Issue1
PagesG18G23
AbstractIn this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744501
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Record identifier0beeaddc-8e47-4561-a8e5-d82f2d0740fe
Record created2009-10-27
Record modified2016-05-09
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