Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP

Download
  1. Available on October 1, 2018
  2. Get@NRC: Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.5002677
AuthorSearch for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
1077-3118
Volume111
Issue16
Article number162107
Pages# of pages: 5
AbstractMinority carrier diffusion lengths in low-doped n-InGaAs using InP/InGaAs double-heterostructures are reported using a simple electrical technique. The contributions from heavy and light holes are also extracted using this methodology, including minority carrier mobilities and lifetimes. Heavy holes are shown to initially dominate the transport due to their higher valence band density of states, but at large diffusion distances, the light holes begin to dominate due to their larger diffusion length. It is found that heavy holes have a diffusion length of 54.5 ± 0.6 μm for an n-InGaAs doping of 8.4 × 1015 cm–3 at room temperature, whereas light holes have a diffusion length in excess of 140 μm. Heavy holes demonstrate a mobility of 692 ± 63 cm2/Vs and a lifetime of 1.7 ± 0.2 μs, whereas light holes demonstrate a mobility of 6200 ± 960 cm–2/Vs and a slightly longer lifetime of 2.6 ± 1.0 μs. The presented method, which is limited to low injection conditions, is capable of accurately resolving minority carrier transport properties.
Publication date
PublisherAIP Publishing
LanguageEnglish
AffiliationAdvanced Electronics and Photonics; Information and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23002462
Export citationExport as RIS
Report a correctionReport a correction
Record identifier1bc4fc43-ad56-4926-8a26-d88a522f76c7
Record created2017-11-14
Record modified2017-11-14
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)
Date modified: