Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

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TypeArticle
Journal titleCondensed Matter
Article numberarXiv:1707.08023
Pages# of pages: 9
SubjectInGaAs; SWIR; minority carrier diffusion length; mobility; lifetime; doping dependence; modeling and simulation; dark current; pixel pitch
AbstractThe hole diffusion length in n-InGaAs is extracted for two samples of different doping concentrations using a set of long and thin diffused junction diodes separated by various distances on the order of the diffusion length. The methodology is described, including the ensuing analysis which yields diffusion lengths between 70 - 85 um at room temperature for doping concentrations in the range of 5 - 9 x 10^15 cm-3. The analysis also provides insight into the minority carrier mobility which is a parameter not commonly reported in the literature. Hole mobilities on the order of 500 - 750 cm2/Vs are reported for the aforementioned doping range, which are comparable albeit longer than the majority hole mobility for the same doping magnitude in p-InGaAs. A radiative recombination coefficient of (0.5-0.2)x10^-10 cm^-3s^-1 is also extracted from the ensuing analysis for an InGaAs thickness of 2.7 um. Preliminary evidence is also given for both heavy and light hole diffusion. The dark current of InP/InGaAs p-i-n photodetectors with 25 and 15 um pitches are then calibrated to device simulations and correlated to the extracted diffusion lengths and doping concentrations. An effective Shockley-Read-Hall lifetime of between 90-200 us provides the best fit to the dark current of these structures.
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PublisherCornell University Library
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Linkhttps://arxiv.org/abs/1707.08023
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23002212
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Record identifier443a38d9-d650-4b20-82b1-6701d5ba314a
Record created2017-09-06
Record modified2017-09-06
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