Polarization properties of InAs/InGaAsP/InP quantum dot stacks

Download
  1. (PDF, 633 KB)
  2. Get@NRC: Polarization properties of InAs/InGaAsP/InP quantum dot stacks (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1088/0268-1242/25/4/045001
AuthorSearch for: ; Search for: ; Search for:
TypeArticle
Journal titleSemiconductor Science and Technology
Volume25
Issue4
Pages14; # of pages: 4
AbstractSurface and edge emission polarization properties of samples containing four InAs/InGaAsP/InP quantum dot layers with a stacking period from 30 nm down to 5.1 nm are investigated. Closely stacked layers show decreasing (constant) edge emission degree of polarization for emission perpendicular to the short dot (long dot) axis. Increase of the surface emission degree of polarization with decreasing period suggests an elongation of the wavefunction as dot period decreases. Use of a miscut substrate eliminates this surface emission polarization dependence, which could lead to edge polarization-independent applications.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17400991
Export citationExport as RIS
Report a correctionReport a correction
Record identifier625ab5d8-a3fe-4895-9cc3-82af4c997193
Record created2011-03-26
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)