Well-resolved band-edge photoluminescence from strained Si[1-x]Ge[x] layers grown by rapid thermal chemical vapor deposition

AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
ConferenceSilicon molecular beam epitaxy : symposium, April 29-May 3, 1991, Anaheim, California, USA
ISSN0272-9172
ISBN155899114X
Pages341346; # of pages: 6
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards
Peer reviewedNo
NRC number1199
NPARC number8900718
Export citationExport as RIS
Report a correctionReport a correction
Record identifier69cd13db-046a-4d89-85cc-b8f1fab6cee6
Record created2009-04-22
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)