Effect of the shape of the first barrier on quantum well infrared photodetector performance

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DOIResolve DOI: http://doi.org/10.1063/1.365857
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TypeArticle
Journal titleJournal Of Applied Physics
Volume82
Issue2
Pages889892; # of pages: 4
Subjectaluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; semiconductor quantum wells
AbstractA systematic study of a set of GaAs/AlGaAs quantum well infrared photodetectors with various shapes of the first barrier (which acts as the device emitter or collector barrier depending on the applied bias polarity) is reported on. Three types of barriers are investigated: a triangular, a thick, and a high barrier. It is found that the effect of the detailed emitter or collector barrier shapes on the detector performance is negligible.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328103
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Record identifier8ce86903-fd69-4aeb-821d-c431a7afd92c
Record created2009-09-10
Record modified2016-05-09
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