Composition and Strain of Coherent Si1-x Gex Islands on Si

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Proceedings titleGroup IV Photonics, 2006. 3rd IEEE International Conference on
Conference3rd IEEE International Conference on Group IV Photonics, 13-15 September 2006
Pages7577; # of pages: 3
AbstractIn this paper, the study of alloy composition on SiGe island growth by MBE under similar conditions has shown that the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346234
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Record identifier8e439a3d-000b-4b95-b15c-7cddc41a1aa3
Record created2009-09-17
Record modified2016-05-09
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