In-situ single-wavelength fast-nulling ellipsometric measurements on CdTe-Cd1-xMnxTe quantum well and superlattice structures grown by pulsed-laser evaporation and epitaxy

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DOIResolve DOI: http://doi.org/10.1117/12.206291
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TypeArticle
Proceedings titleLaser-induced thin film processing
Series titleProceedings of SPIE; Volume 2403
ConferenceLaser-induced thin film processing,San Jose, California, USA, February 8-10, 1995
ISSN0277-786X
ISBN0819417505
Pages116
AbstractAn EXACTA 2000 Faraday-modulated fast-nulling ellipsometer operating at 6328 angstrom has been used in situ to measure the polarizer (P) and analyzer (A) angles produced by CdTe-Cd1-xMnxTe quantum well and superlattice structures during growth by pulsed laser evaporation and epitaxy. This ellipsometer is capable of measuring P and A with a relative accuracy of 0.003 degree(s) at a rate of 10 points per second. This makes it especially useful in monitoring the growth of quantum wells and superlattice structures. From fitting the ellipsometric data, the thicknesses of the layers in CdTe-Cd1-xMnxTe quantum well and superlattice structures can be determined with an accuracy of 5% for layers more than 100 angstrom thick and with an accuracy of 10% for layers less than 100 angstrom thick. However, when each layer of thickness less than 100 angstrom in a CdTe-Cd1-xMnxTe superlattice consists of two sublayers with different indices of refraction, then the accuracy of the thickness determination is only 20%. The possibility of using such a Faraday-modulated fast-nulling ellipsometer to control the deposition of quantum well layers and superlattices is discussed.
Publication date
PublisherSPIE--the International Society for Optical Engineering
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Chemical Process and Environmental Technology
Peer reviewedNo
NPARC number12338200
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Record identifierabd887d8-0c6f-41a0-a8a8-e8ecb90036b5
Record created2009-09-10
Record modified2017-09-13
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