Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.76.165321
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TypeArticle
Journal titlePhysical review. B, Condensed matter and materials physics
Volume76
Issue16
Pages165321
AbstractThe frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs∕AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120GHz, MIROs start to quench, while above 230GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12743783
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Record identifierb28eed19-935d-408c-a495-27326eabb35c
Record created2009-10-27
Record modified2016-05-09
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