Monitoring the self-heating in a Hhigh frequency GaN HFET

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Proceedings titleSolid State Electronics
Conference2005 International Semiconductor Device Research Symposium (ISDRS), 7-9 December 2005, Bethesda, MD, USA
Pages10461050; # of pages: 5
Subjectself-heating; GaN HFETs; device temperature
AbstractThe self-heating has been measured and simulated for GaN field effect transistors. For a high frequency test device, which is really two devices in parallel, experiments are described where one side of the device has been heated and the other side used to monitor the self-heating and heat-flow from the side of the device where the self-heating is severe.
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number12744634
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Record identifierb6afab73-a317-415a-8120-039e77dd900e
Record created2009-10-27
Record modified2016-05-09
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