Temperature dependence of the shallow-donor bound-exciton-emission linewidth in high-purity InP

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.52.1485
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TypeArticle
Journal titlePhysical Review B: condensed matter and materials physics
Volume52
Issue3
Pages14851488; # of pages: 4
AbstractTemperature-dependent photoluminescence measurements have been performed to study the linewidth of the ground and first excited states of the neutral shallow-donor bound-exciton transition in a high-purity n-type InP epilayer. For temperatures below 20 K, a theoretical model developed by Chou and Neumark to take into account the electron-hole correlation and the usual electron-phonon coupling is found to be in acceptable agreement with the linewidth data which follows a linear dependence upon temperature.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327699
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Record identifierc6d05fa5-7ca2-47cc-af03-5b5c741dfe10
Record created2009-09-10
Record modified2016-05-09
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