Photosintering and electrical performance of CuO nanoparticle inks

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DOIResolve DOI: http://doi.org/10.1016/j.orgel.2014.05.014
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TypeArticle
Journal titleOrganic Electronics: physics, materials, applications
ISSN1566-1199
Volume15
Issue8
Pages18361842; # of pages: 7
SubjectCopper; Nanoparticles; Printing; Sheet resistance; Sintering; Complex circuits; Conductive ink; Copper oxide nanoparticles; CuO nanoparticles; Electrical conductance; Electrical performance; Nanoparticle inks; Photosintering; Ink
AbstractA copper oxide (CuO) nanoparticle ink was inkjet printed and photosintered in order to optimize electrical performance as a function of pattern dimension. For a given photosintering condition, electrical conductance varied strongly with line widths, ranging from 100 to 300 μm, illustrating the implications of printing and sintering complex circuit designs with varying feature sizes. By tuning the time delay between printing and sintering, exposure wavelength, radiant energy, pulse width and the distance between the light-source and substrate, photosintering conditions were optimized so that variations in sheet resistance for different line widths were minimized. Using optimized photosintering conditions, a sheet resistance value as low as 150 mΩ/□ (resistivity of 9 μΩ cm) and current carrying capacity of 280 mA for a 300 μm wide trace was achieved. © 2014 Published by Elsevier B.V. All rights reserved.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies (SDT-TSR)
Peer reviewedYes
NPARC number21272111
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Record identifierf04aeb8b-ac3f-4d05-9762-50987ee75289
Record created2014-07-23
Record modified2016-05-09
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